MRFG35005MT1 transistor equivalent, gallium arsenide phemt rf power field effect transistor.
with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB linear base station applic.
7.5 pF Chip Capacitors 0.4 pF Chip Capacitor (0805) 3.9 pF Chip Capacitors (0805) 10 pF Chip Capacitors 100 pF Chip Capacitors 100 pF Chip Capacitors 1000 pF Chip Capacitors 3.9 µF Chip Capacitors 0.1 µF Chip Capacitors 22 µF, 35 V Tantalum Surface M.
Image gallery
TAGS
Manufacturer
Related datasheet